DIODES DMN2310UW-13

DIODES · FETs & Power MOSFETs · MPN DMN2310UW-13

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Specifications

Drain to Source Voltage20V
Gate Charge(Qg)700pC@4.5V
Current - Continuous Drain(Id)1.3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))950mV
Pd - Power Dissipation550mW
Reverse Transfer Capacitance (Crss@Vds)6pF
RDS(on)200mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)38pF

Technical details

20V 1.3A 950mV 550mW 200mΩ@4.5V 1 N-channel SOT-323 Single FETs, MOSFETs RoHS

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