DIODES DMN2310UT-7

DIODES · FETs & Power MOSFETs · MPN DMN2310UT-7

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Specifications

Drain to Source Voltage20V
Gate Charge(Qg)700pC@4.5V
Current - Continuous Drain(Id)1.2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))950mV
Pd - Power Dissipation490mW
Reverse Transfer Capacitance (Crss@Vds)6pF
RDS(on)240mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)38pF

Technical details

20V 1.2A 950mV 490mW 240mΩ@4.5V 1 N-channel SOT-523 Single FETs, MOSFETs RoHS

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