DIODES · FETs & Power MOSFETs · MPN DMN2310UFB4-7B
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| Drain to Source Voltage | 20V |
|---|---|
| Gate Charge(Qg) | 700pC@4.5V |
| Current - Continuous Drain(Id) | 2.1A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 950mV |
| Pd - Power Dissipation | 1.14W |
| Reverse Transfer Capacitance (Crss@Vds) | 6pF |
| RDS(on) | 175mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 38pF |
20V 2.1A 950mV 1.14W 175mΩ@4.5V 1 N-channel X2-DFN1006-3 Single FETs, MOSFETs RoHS