DIODES DMN2300UFB4-7B

DIODES · FETs & Power MOSFETs · MPN DMN2300UFB4-7B

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Specifications

Gate Charge(Qg)1.6nC@4.5V
Drain to Source Voltage20V
Output Capacitance(Coss)9.7pF
Current - Continuous Drain(Id)1.3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))950mV
Pd - Power Dissipation500mW
Reverse Transfer Capacitance (Crss@Vds)7.5pF
RDS(on)175mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)67.6pF
TypeN-Channel

Technical details

N-Channel 20V 1.3A 500mW Surface Mount X2-DFN1006-3

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