DIODES DMN2230UQ-7

DIODES · FETs & Power MOSFETs · MPN DMN2230UQ-7

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Specifications

Gate Charge(Qg)2.3nC@10V
Drain to Source Voltage20V
Current - Continuous Drain(Id)2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation600mW
RDS(on)110mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)188pF

Technical details

N-Channel 20V 2A 600mW Surface Mount SOT-23

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