DIODES DMN2230UQ-13

DIODES · FETs & Power MOSFETs · MPN DMN2230UQ-13

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Specifications

Drain to Source Voltage20V
Gate Charge(Qg)2.3nC@10V
Current - Continuous Drain(Id)2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation600mW
RDS(on)110mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)188pF

Technical details

20V 2A 1V 600mW 110mΩ@4.5V 1 N-channel SOT-23-3 Single FETs, MOSFETs RoHS

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