DIODES · FETs & Power MOSFETs · MPN DMN2100UDM-7
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| Gate Charge(Qg) | 8.8nC@4.5V |
|---|---|
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 1W |
| Reverse Transfer Capacitance (Crss@Vds) | 84pF |
| RDS(on) | 130mΩ@1.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 555pF |
20V 4A 1V 1W 130mΩ@1.5V 1 N-channel SOT-26 Single FETs, MOSFETs RoHS