DIODES DMN2065UWQ-7

DIODES · FETs & Power MOSFETs · MPN DMN2065UWQ-7

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Specifications

Gate Charge(Qg)5.4nC@4.5V
Drain to Source Voltage20V
Output Capacitance(Coss)-
Current - Continuous Drain(Id)2.8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.56V
Pd - Power Dissipation700mW
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)140mΩ@1.5V
Number1 N-channel
Input Capacitance(Ciss)-
TypeN-Channel

Technical details

N-Channel 20V 2.8A 0.7W Surface Mount SOT-323

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