DIODES DMN2058U-13

DIODES · FETs & Power MOSFETs · MPN DMN2058U-13

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Specifications

Gate Charge(Qg)7.7nC
Drain to Source Voltage20V
Current - Continuous Drain(Id)4.6A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.2V
Pd - Power Dissipation740mW
Reverse Transfer Capacitance (Crss@Vds)39pF
RDS(on)35mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)281pF

Technical details

N-Channel 20V 4.6A 0.74W Surface Mount SOT-23

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