DIODES DMN2055UWQ-7

DIODES · FETs & Power MOSFETs · MPN DMN2055UWQ-7

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Specifications

Gate Charge(Qg)4.3nC@4.5V
Drain to Source Voltage20V
Current - Continuous Drain(Id)4.8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation800mW
RDS(on)45mΩ@2.5V
Reverse Transfer Capacitance (Crss@Vds)37pF
Number1 N-channel
Input Capacitance(Ciss)400pF

Technical details

N-Channel 20V 4.8A 0.8W Surface Mount SOT-323

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