DIODES DMN2055UW-7

DIODES · FETs & Power MOSFETs · MPN DMN2055UW-7

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Specifications

Drain to Source Voltage20V
Gate Charge(Qg)4.3nC@4.5V
Output Capacitance(Coss)55pF
Current - Continuous Drain(Id)3.1A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation650mW
Reverse Transfer Capacitance (Crss@Vds)37pF
RDS(on)35mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)400pF

Technical details

N-Channel 20V 3.1A 650mW Surface Mount SOT-323

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