DIODES DMN2053UVTQ-7

DIODES · FETs & Power MOSFETs · MPN DMN2053UVTQ-7

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Specifications

Current - Continuous Drain(Id)4.6A
Pd - Power Dissipation1.1W
RDS(on)35mΩ@4.5V
Gate Threshold Voltage (Vgs(th))1V
Drain to Source Voltage20V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)32pF
Number2 N-Channel
Input Capacitance(Ciss)369pF
Gate Charge(Qg)3.6nC@4.5V
Operating Temperature-
Output Capacitance(Coss)54pF

Technical details

4.6A 1.1W 35mΩ@4.5V 1V 2 N-Channel TSOT-26 FET, MOSFET Arrays RoHS

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