DIODES · FETs & Power MOSFETs · MPN DMN2041UVT-13
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| Configuration | - |
|---|---|
| Current - Continuous Drain(Id) | 5.8A |
| RDS(on) | 32mΩ@2.5V |
| Pd - Power Dissipation | 1.44W |
| Gate Threshold Voltage (Vgs(th)) | 900mV |
| Drain to Source Voltage | 20V |
| Type | N-Channel |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 689pF |
| Gate Charge(Qg) | 9.1nC@4.5V |
| Operating Temperature | -55℃~+150℃ |
5.8A 32mΩ@2.5V 1.44W 900mV 2 N-Channel TSOT-26 FET, MOSFET Arrays RoHS