DIODES DMN2040UVT-13

DIODES · FETs & Power MOSFETs · MPN DMN2040UVT-13

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Specifications

Drain to Source Voltage20V
Gate Charge(Qg)7.5nC@4.5V
Current - Continuous Drain(Id)6.7A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation1.2W
Reverse Transfer Capacitance (Crss@Vds)83pF
RDS(on)32mΩ@2.5V
Number1 N-channel
Input Capacitance(Ciss)667pF

Technical details

N-Channel 20V 6.7A 1.2W Surface Mount TSOT-26

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