DIODES DMN2029UVT-7

DIODES · FETs & Power MOSFETs · MPN DMN2029UVT-7

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Specifications

Drain to Source Voltage20V
Gate Charge(Qg)7.1nC@4.5V
Current - Continuous Drain(Id)6.8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation700mW
RDS(on)24mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)646pF

Technical details

20V 6.8A 1.5V 700mW 24mΩ@4.5V 1 N-channel TSOT-26 Single FETs, MOSFETs RoHS

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