DIODES · FETs & Power MOSFETs · MPN DMN2029USD-13
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| Current - Continuous Drain(Id) | 5.8A |
|---|---|
| RDS(on) | 35mΩ@2.5V |
| Pd - Power Dissipation | 1.2W |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Drain to Source Voltage | 20V |
| Reverse Transfer Capacitance (Crss@Vds) | 110pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 1.171nF |
| Gate Charge(Qg) | 10.4nC@4.5V |
| Operating Temperature | -55℃~+150℃ |
5.8A 35mΩ@2.5V 1.2W 1.5V 2 N-Channel SO-8 FET, MOSFET Arrays RoHS