DIODES DMN2026UVT-13

DIODES · FETs & Power MOSFETs · MPN DMN2026UVT-13

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Specifications

Drain to Source Voltage20V
Gate Charge(Qg)18.4nC@8V
Current - Continuous Drain(Id)6.2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation1.15W
Reverse Transfer Capacitance (Crss@Vds)37pF
RDS(on)24mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)887pF

Technical details

20V 6.2A 1.5V 1.15W 24mΩ@4.5V 1 N-channel TSOT-23-6 Single FETs, MOSFETs RoHS

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