DIODES · FETs & Power MOSFETs · MPN DMN2025UFDF-7
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| Gate Charge(Qg) | 5.9nC@4.5V |
|---|---|
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 4.9A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 900mV |
| Pd - Power Dissipation | 800mW |
| Reverse Transfer Capacitance (Crss@Vds) | 77pF |
| RDS(on) | 27mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 485pF |
20V 4.9A 900mV 800mW 27mΩ@4.5V 1 N-channel UDFN2020-6 Single FETs, MOSFETs RoHS