DIODES · FETs & Power MOSFETs · MPN DMN2022UNS-13
No reviews yet — be the first to review DIODES DMN2022UNS-13.
| Configuration | Common Drain |
|---|---|
| Current - Continuous Drain(Id) | 10.7A |
| RDS(on) | 17mΩ@1.8V |
| Pd - Power Dissipation | 1.9W |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Drain to Source Voltage | 20V |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 1.87nF |
| Gate Charge(Qg) | 20.3nC@4.5V |
| Operating Temperature | - |
10.7A 17mΩ@1.8V 1.9W 1V 2 N-Channel PowerDI3333-8 FET, MOSFET Arrays RoHS