DIODES DMN2020LSN-7

DIODES · FETs & Power MOSFETs · MPN DMN2020LSN-7

No reviews yet — be the first to review DIODES DMN2020LSN-7.

Specifications

Gate Charge(Qg)11.6nC@4.5V
Drain to Source Voltage20V
Current - Continuous Drain(Id)6.9A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation610mW
Reverse Transfer Capacitance (Crss@Vds)142pF
RDS(on)18mΩ@2.5V
Number1 N-channel
Input Capacitance(Ciss)1.149nF

Technical details

N-Channel 20V 6.9A 0.61W Surface Mount SC-59-3

Related FETs & Power MOSFETs