DIODES DMN2019UTS-13

DIODES · FETs & Power MOSFETs · MPN DMN2019UTS-13

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Specifications

Current - Continuous Drain(Id)5.4A
Pd - Power Dissipation780mW
RDS(on)31mΩ@1.8V
Gate Threshold Voltage (Vgs(th))950mV
Drain to Source Voltage20V
Reverse Transfer Capacitance (Crss@Vds)29pF
Number2 N-Channel
Input Capacitance(Ciss)143pF
Gate Charge(Qg)8.8nC@4.5V
Operating Temperature-55℃~+150℃

Technical details

20V 5.4A 0.78W Surface Mount TSSOP-8

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