DIODES DMN2016UFX-7

DIODES · FETs & Power MOSFETs · MPN DMN2016UFX-7

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Specifications

Current - Continuous Drain(Id)9.9A
RDS(on)20mΩ@2.5V
Pd - Power Dissipation2.23W
Gate Threshold Voltage (Vgs(th))1.5V
Drain to Source Voltage24V
Type-
Reverse Transfer Capacitance (Crss@Vds)120pF
Number2 N-Channel
Input Capacitance(Ciss)950pF
Gate Charge(Qg)-
Operating Temperature-
Output Capacitance(Coss)130pF

Technical details

9.9A 20mΩ@2.5V 2.23W 1.5V 2 N-Channel VDFN2050-4 FET, MOSFET Arrays RoHS

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