DIODES DMN2014LHAB-7

DIODES · FETs & Power MOSFETs · MPN DMN2014LHAB-7

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Specifications

Current - Continuous Drain(Id)9A
RDS(on)28mΩ@1.8V
Pd - Power Dissipation1.7W
Gate Threshold Voltage (Vgs(th))1.1V
Drain to Source Voltage20V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)-
Number2 N-Channel
Input Capacitance(Ciss)-
Gate Charge(Qg)16nC@4.5V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)-

Technical details

N-Channel Array 20V 9A 1.7W Surface Mount U-DFN2030-6B-EP

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