DIODES · FETs & Power MOSFETs · MPN DMN2014LHAB-13
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| Current - Continuous Drain(Id) | 9A |
|---|---|
| Pd - Power Dissipation | 1.7W |
| RDS(on) | 28mΩ@1.8V |
| Gate Threshold Voltage (Vgs(th)) | 1.1V |
| Drain to Source Voltage | 20V |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 145pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 1.55nF |
| Gate Charge(Qg) | 16nC@4.5V |
| Operating Temperature | -55℃~+150℃ |
| Output Capacitance(Coss) | 166pF |
9A 1.7W 28mΩ@1.8V 1.1V 2 N-Channel UDFN2030-6 FET, MOSFET Arrays RoHS