DIODES · FETs & Power MOSFETs · MPN DMN2013UFX-7
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| Configuration | - |
|---|---|
| Current - Continuous Drain(Id) | 10A |
| Pd - Power Dissipation | 2.14W |
| RDS(on) | 11.5mΩ@4.5V |
| Gate Threshold Voltage (Vgs(th)) | 1.1V |
| Drain to Source Voltage | 20V |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 2.607nF |
| Gate Charge(Qg) | 57.4nC@8V |
| Operating Temperature | -55℃~+150℃ |
10A 2.14W 11.5mΩ@4.5V 1.1V 2 N-Channel WDFN5020-6 FET, MOSFET Arrays RoHS