DIODES · FETs & Power MOSFETs · MPN DMN2013UFDEQ-7
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| Gate Charge(Qg) | 25.8nC@8V |
|---|---|
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 10.5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 500mV |
| Pd - Power Dissipation | 660mW |
| Reverse Transfer Capacitance (Crss@Vds) | 257pF |
| RDS(on) | 11mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.453nF |
20V 10.5A 500mV 660mW 11mΩ@4.5V 1 N-channel UDFN2020-6 Single FETs, MOSFETs RoHS