DIODES · FETs & Power MOSFETs · MPN DMN2013UFDE-7
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| Gate Charge(Qg) | 14.3nC |
|---|---|
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 10.5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.1V |
| Pd - Power Dissipation | 660mW |
| Reverse Transfer Capacitance (Crss@Vds) | 257pF |
| RDS(on) | 11mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.453nF |
20V 10.5A 1.1V 660mW 11mΩ@4.5V 1 N-channel DFN2020-6E Single FETs, MOSFETs RoHS