DIODES DMN2011UFX-7

DIODES · FETs & Power MOSFETs · MPN DMN2011UFX-7

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Specifications

Current - Continuous Drain(Id)12.2A
Pd - Power Dissipation2.1W
RDS(on)13mΩ@2.5V
Gate Threshold Voltage (Vgs(th))1V
Drain to Source Voltage20V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)265pF
Number2 N-Channel
Input Capacitance(Ciss)2.248nF
Gate Charge(Qg)56nC@10V
Operating Temperature-55℃~+150℃

Technical details

N-Channel Array 20V 12.2A 2.1W Surface Mount VDFN2050-4

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