DIODES DMN2011UFDF-7

DIODES · FETs & Power MOSFETs · MPN DMN2011UFDF-7

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Specifications

Drain to Source Voltage20V
Gate Charge(Qg)56nC@10V
Output Capacitance(Coss)295pF
Current - Continuous Drain(Id)11.7A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation2.1W
Reverse Transfer Capacitance (Crss@Vds)265pF
RDS(on)6.5mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)2.248nF

Technical details

N-Channel 20V 11.7A 2.1W Surface Mount UDFN2020-6

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