DIODES · FETs & Power MOSFETs · MPN DMN2011UFDE-7
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| Gate Charge(Qg) | 36nC |
|---|---|
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 11.7A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 610mW |
| Reverse Transfer Capacitance (Crss@Vds) | 398pF |
| RDS(on) | 9.5mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.372nF |
N-Channel 20V 11.7A 0.61W Surface Mount UDFN2020-6