DIODES · FETs & Power MOSFETs · MPN DMN2009USS-13
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| Gate Charge(Qg) | 16nC@4.5V |
|---|---|
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 12.1A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| Pd - Power Dissipation | 1.4W |
| Reverse Transfer Capacitance (Crss@Vds) | 176pF |
| RDS(on) | 6.7mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.706nF |
20V 12.1A 1.2V 1.4W 6.7mΩ@4.5V 1 N-channel SO-8 Single FETs, MOSFETs RoHS