DIODES · FETs & Power MOSFETs · MPN DMN2009UCA4-7
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| Pd - Power Dissipation | 1.9W |
|---|---|
| RDS(on) | 12.9mΩ@3.8V |
| Type | N-Channel |
| Gate Charge(Qg) | 17.5nC@4V |
| Operating Temperature | -55℃~+150℃ |
1.9W 12.9mΩ@3.8V FET, MOSFET Arrays RoHS