DIODES · FETs & Power MOSFETs · MPN DMN2009LSS-13
No reviews yet — be the first to review DIODES DMN2009LSS-13.
| Gate Charge(Qg) | 28.3nC@4.5V |
|---|---|
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 12A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| Pd - Power Dissipation | 2W |
| Reverse Transfer Capacitance (Crss@Vds) | 496pF |
| RDS(on) | 12mΩ@2.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.555nF |
20V 12A 1.2V 2W 12mΩ@2.5V 1 N-channel SO-8 Single FETs, MOSFETs RoHS