DIODES DMN2008LFU-7

DIODES · FETs & Power MOSFETs · MPN DMN2008LFU-7

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Specifications

Current - Continuous Drain(Id)14.5A
RDS(on)4.7mΩ@4.5V
Pd - Power Dissipation1.7W
Gate Threshold Voltage (Vgs(th))1.5V
Drain to Source Voltage20V
Reverse Transfer Capacitance (Crss@Vds)106pF
Number2 N-Channel
Input Capacitance(Ciss)1.418nF
Gate Charge(Qg)42.3nC@10V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)323pF

Technical details

14.5A 4.7mΩ@4.5V 1.7W 1.5V 2 N-Channel DFN2030-6B-EP FET, MOSFET Arrays RoHS

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