DIODES DMN2008LFU-13

DIODES · FETs & Power MOSFETs · MPN DMN2008LFU-13

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Specifications

Current - Continuous Drain(Id)14.5A
RDS(on)9.6mΩ@2.5V
Pd - Power Dissipation1.7W
Gate Threshold Voltage (Vgs(th))1.5V
Drain to Source Voltage20V
Type-
Number2 N-Channel
Input Capacitance(Ciss)1.418nF
Gate Charge(Qg)42.3nC@10V
Operating Temperature-55℃~+150℃

Technical details

14.5A 9.6mΩ@2.5V 1.7W 1.5V 2 N-Channel UDFN2030-6 FET, MOSFET Arrays RoHS

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