DIODES DMN2005UPS-13

DIODES · FETs & Power MOSFETs · MPN DMN2005UPS-13

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Specifications

Gate Charge(Qg)60nC
Drain to Source Voltage20V
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.2V
Pd - Power Dissipation2.5W
Reverse Transfer Capacitance (Crss@Vds)505pF
RDS(on)4.6mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)5.337nF

Technical details

N-Channel 20V 100A 2.5W Surface Mount PowerDI5060-8

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