DIODES · FETs & Power MOSFETs · MPN DMN2005UFGQ-13
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| Drain to Source Voltage | 20V |
|---|---|
| Gate Charge(Qg) | 164nC@10V |
| Current - Continuous Drain(Id) | 18A;50A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| Pd - Power Dissipation | 2.27W |
| Reverse Transfer Capacitance (Crss@Vds) | 477pF |
| RDS(on) | 4.6mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 6.495nF |
20V 1.2V 2.27W 4.6mΩ@4.5V 1 N-channel PowerDI3333-8 Single FETs, MOSFETs RoHS