DIODES DMN2005UFG-7

DIODES · FETs & Power MOSFETs · MPN DMN2005UFG-7

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Specifications

Gate Charge(Qg)164nC@10V
Drain to Source Voltage20V
Output Capacitance(Coss)546pF
Current - Continuous Drain(Id)18.1A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.2V
Pd - Power Dissipation55W
Reverse Transfer Capacitance (Crss@Vds)477pF
RDS(on)8.7mΩ@2.5V
Number1 N-channel
Input Capacitance(Ciss)6.495nF

Technical details

20V 18.1A 1.2V 55W 8.7mΩ@2.5V 1 N-channel PowerDI3333-8 Single FETs, MOSFETs RoHS

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