DIODES DMN2005UFG-13

DIODES · FETs & Power MOSFETs · MPN DMN2005UFG-13

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Specifications

Gate Charge(Qg)68.8nC@4.5V
Drain to Source Voltage20V
Current - Continuous Drain(Id)50A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.2V
Pd - Power Dissipation2.27W
Reverse Transfer Capacitance (Crss@Vds)477pF
RDS(on)4.6mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)6.495nF

Technical details

N-Channel 20V 50A 2.27W Surface Mount PowerDI3333-8

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