DIODES DMN2005LPK-7

DIODES · FETs & Power MOSFETs · MPN DMN2005LPK-7

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Specifications

Gate Charge(Qg)-
Drain to Source Voltage20V
Current - Continuous Drain(Id)440mA
Operating Temperature --65℃~+150℃
Gate Threshold Voltage (Vgs(th))1.2V
Pd - Power Dissipation450mW
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)350mΩ@4V
Number1 N-channel
Input Capacitance(Ciss)-
Vgs±10V
TypeN-Channel

Technical details

N-Channel 20V 440mA 450mW Surface Mount X1-DFN1006-3

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