DIODES DMN2005LP4K-7

DIODES · FETs & Power MOSFETs · MPN DMN2005LP4K-7

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Specifications

Gate Charge(Qg)-
Drain to Source Voltage20V
Output Capacitance(Coss)6.5pF
Current - Continuous Drain(Id)300mA
Operating Temperature --65℃~+150℃
Gate Threshold Voltage (Vgs(th))1.7V
Pd - Power Dissipation400mW
Reverse Transfer Capacitance (Crss@Vds)4.8pF
RDS(on)3.5Ω@1.8V
Number1 N-channel
Input Capacitance(Ciss)37.1pF
TypeN-Channel

Technical details

N-Channel 20V 300mA 400mW Surface Mount X2-DFN1006-3

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