DIODES DMN2005K-7

DIODES · FETs & Power MOSFETs · MPN DMN2005K-7

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Specifications

Gate Charge(Qg)500pC@4.5V
Drain to Source Voltage20V
Output Capacitance(Coss)5.7pF
Current - Continuous Drain(Id)300mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))900mV
Pd - Power Dissipation350mW
Reverse Transfer Capacitance (Crss@Vds)4.2pF
RDS(on)550mΩ@1.8V;400mΩ@2.7V
Number1 N-channel
Input Capacitance(Ciss)36pF

Technical details

N-Channel 20V 300mA 350mW Surface Mount SOT-23

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