DIODES DMN2005DLP4K-7

DIODES · FETs & Power MOSFETs · MPN DMN2005DLP4K-7

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Specifications

Current - Continuous Drain(Id)300mA
RDS(on)1.7Ω@2.7V
Pd - Power Dissipation400mW
Gate Threshold Voltage (Vgs(th))900mV
Drain to Source Voltage20V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)-
Number2 N-Channel
Input Capacitance(Ciss)-
Gate Charge(Qg)-
Operating Temperature-
Output Capacitance(Coss)-

Technical details

300mA 1.7Ω@2.7V 400mW 900mV 2 N-Channel X2-DFN1310-6 FET, MOSFET Arrays RoHS

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