DIODES DMN2004K-7

DIODES · FETs & Power MOSFETs · MPN DMN2004K-7

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Specifications

Gate Charge(Qg)900pC@4.5V
Drain to Source Voltage20V
Output Capacitance(Coss)25pF
Current - Continuous Drain(Id)630mA
Operating Temperature --65℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation350mW
Reverse Transfer Capacitance (Crss@Vds)20pF
RDS(on)400mΩ@4.5V;700mΩ@1.8V
Number1 N-channel
Input Capacitance(Ciss)150pF

Technical details

N-Channel 20V 630mA 350mW Surface Mount SOT-23

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