DIODES DMN14M8UFDF-13

DIODES · FETs & Power MOSFETs · MPN DMN14M8UFDF-13

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Specifications

Configuration-
Gate Charge(Qg)29.5nC@10V
Drain to Source Voltage12V
Current - Continuous Drain(Id)-
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.2V
Pd - Power Dissipation1.1W
Reverse Transfer Capacitance (Crss@Vds)352pF
RDS(on)6mΩ
Number1 N-channel
Input Capacitance(Ciss)1.246nF

Technical details

12V 1.2V 1.1W 6mΩ 1 N-channel UDFN2020-6 Single FETs, MOSFETs RoHS

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