DIODES DMN13H750S-7

DIODES · FETs & Power MOSFETs · MPN DMN13H750S-7

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Specifications

Gate Charge(Qg)5.6nC@10V
Drain to Source Voltage130V
Output Capacitance(Coss)19pF
Current - Continuous Drain(Id)1A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation1.26W
Reverse Transfer Capacitance (Crss@Vds)11pF
RDS(on)850mΩ@6V
Number1 N-channel
Input Capacitance(Ciss)231pF
TypeN-Channel

Technical details

N-Channel 130V 1A 1.26W Surface Mount SOT-23

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