DIODES DMN13H750S-13

DIODES · FETs & Power MOSFETs · MPN DMN13H750S-13

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Specifications

Drain to Source Voltage130V
Gate Charge(Qg)5.6nC@10V
Current - Continuous Drain(Id)1A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation770mW
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)750mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)231pF

Technical details

130V 1A 4V 770mW 750mΩ@10V 1 N-channel SOT-23-3 Single FETs, MOSFETs RoHS

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