DIODES DMN1150UFL3-7

DIODES · FETs & Power MOSFETs · MPN DMN1150UFL3-7

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Specifications

Current - Continuous Drain(Id)2A
RDS(on)185mΩ@2.5V
Pd - Power Dissipation900mW
Gate Threshold Voltage (Vgs(th))1V
Drain to Source Voltage12V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)23pF
Number2 N-Channel
Input Capacitance(Ciss)115pF
Gate Charge(Qg)1.4nC@4.5V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)25pF

Technical details

2A 185mΩ@2.5V 900mW 1V 2 N-Channel X2-DFN1310-6 FET, MOSFET Arrays RoHS

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