DIODES DMN1150UFB-7B

DIODES · FETs & Power MOSFETs · MPN DMN1150UFB-7B

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Specifications

Gate Charge(Qg)1.5nC@4.5V
Drain to Source Voltage12V
Current - Continuous Drain(Id)1.41A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation500mW
Reverse Transfer Capacitance (Crss@Vds)21pF
RDS(on)185mΩ@2.5V
Number1 N-channel
Input Capacitance(Ciss)106pF

Technical details

N-Channel 12V 1.41A 0.5W Surface Mount DFN-3L(0.6x1)

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