DIODES DMN10H700S-7

DIODES · FETs & Power MOSFETs · MPN DMN10H700S-7

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Specifications

Gate Charge(Qg)4.6nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)700mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation500mW
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)900mΩ@6V
Number1 N-channel
Input Capacitance(Ciss)235pF
TypeN-Channel

Technical details

N-Channel 100V 0.7A 0.5W Surface Mount SOT-23

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